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Search Results: Records 1-18 displayed on this page of 18
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Journal Articles

Effects of steam annealing on CV characteristics of 4H-SiC MOS structures

Yoshikawa, Masahito; Takahashi, Kunimasa*; Oshima, Takeshi; Kitabatake, Makoto*; Ito, Hisayoshi

Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.199 - 200, 2000/00

no abstracts in English

Journal Articles

Formation of oxide-trapped charges in 6H-SiC MOS structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

JAERI-Conf 97-003, p.265 - 268, 1997/03

no abstracts in English

Journal Articles

Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Saito, Kazunari; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, Kazunori*

JAERI-Conf 97-003, p.243 - 248, 1997/03

no abstracts in English

Journal Articles

Formation of oxide-trapped charges in 6H-SiC MOS structures

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

Radiation Physics and Chemistry, 50(5), p.429 - 433, 1997/00

https://doi.org/10.1016/S0969-806X(97)00065-0
 Times Cited Count：0 Percentile：0.01(Chemistry, Physical)

no abstracts in English

Journal Articles

Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*; Takahashi, Yoshihiro*; Onishi, Kazunori*

Journal of Applied Physics, 80(1), p.282 - 287, 1996/07

https://doi.org/10.1063/1.362817
 Times Cited Count：22 Percentile：70.66(Physics, Applied)

no abstracts in English

Journal Articles

Depth profile of oxide-trapped charges in 6H-SiC metal-oxide-semiconductor structures irradiated with gamma-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.159 - 165, 1996/00

no abstracts in English

Journal Articles

Test structure for determining the charge distribution in the oxide of MOS structure

Takahashi, Yoshihiro*; Imaki, Shunsaku*; Onishi, Kazunori*; Yoshikawa, Masahito

Proceedings of IEEE 1995 International Coferece on Microelectronic Test Structures, Vol.8, p.243 - 246, 1995/03

no abstracts in English

Journal Articles

The Change of the charge distribution in the oxide layer of MOS structure with NH$$_{3}$$ annealing due to $$gamma$$-ray irradiation; Gate voltage dependence

Imaki, Shunsaku*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.151 - 152, 1995/00

no abstracts in English

Journal Articles

A Slanted etching method to analyze the trapped charge distribution in the insulators of MIS structures

Onishi, Kazunori*; Takahashi, Yoshihiro*; Imaki, Shunsaku*; *; Yoshikawa, Masahito

Proc. of 21st Int. Symp. for Testing and Failure Analysis (ISTFA 95), 0, p.269 - 274, 1995/00

no abstracts in English

Journal Articles

Evaluation of the charge distribution in the oxide of MOS structure before and after $$gamma$$-ray radiation

*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Denshi Joho Tsushin Gakkai Gijutsu Kenkyu Hokoku, 93(172), p.23 - 27, 1993/07

no abstracts in English

Journal Articles

Thermal annealing effects on build-up of oxide trapped charge in $$gamma$$-ray irradiated 3C-SiC MOS structure

Nemoto, Norio*; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.149 - 150, 1993/00

no abstracts in English

Journal Articles

Evaluation of charge distribution in insulators by means of slanted etching

Imaki, Shunsaku*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.135 - 136, 1993/00

no abstracts in English

Journal Articles

Thermal annealing effects on electric characteristics of MIS structures with nitride layers

*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.133 - 134, 1993/00

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and thermal annealing on characteristics of 3C-SiC MOS structure

Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; *; Yoshida, Sadafumi*

Mater. Res. Soc. Symp. Proc., Vol. 281, p.797 - 802, 1993/00

no abstracts in English

Journal Articles

Gamma-ray irradiation effects on cubic silicon carbide metal-oxide-semiconductor structure

Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*

Amorphous and Crystalline Silicon Carbide IV, p.393 - 398, 1992/00

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure

Yoshikawa, Masahito; Ito, Hisayoshi; Morita, Yosuke; Nashiyama, Isamu*; *; Okumura, Hajime*; Yoshida, Sadafumi*

Journal of Applied Physics, 70(3), p.1309 - 1312, 1991/08

https://doi.org/10.1063/1.349587
 Times Cited Count：38 Percentile：85.1(Physics, Applied)

no abstracts in English

Journal Articles

Effects of gamma-ray radiation on 3C-SiC MOS structure

Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; *; Nashiyama, Isamu*; Yoshida, Sadafumi*

EIM-90-130, p.47 - 55, 1990/12

no abstracts in English

Journal Articles

Effect of electrode materials on radiation hardness for MOS capacitor

Yoshikawa, Masahito; Ito, Hisayoshi; Morita, Yosuke; Kawakami, Waichiro; Nashiyama, Isamu*

EIM-88-121, p.35 - 43, 1988/12

no abstracts in English

18 (Records 1-18 displayed on this page)
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